IRF3205 datasheet, transistor equivalent, Thinki Semiconductor

IRF3205 transistor equivalent, n-channel trench process power mosfet transistor.

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Features and benefits

* VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test Application
* Hard Switched and High Frequency.

Application

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features
* VDS=55V; ID=105A@ VGS=.

Description

The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features
* VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V.

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