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IRF3205 Datasheet, Thinki Semiconductor

IRF3205 transistor equivalent, n-channel trench process power mosfet transistor.

IRF3205 Avg. rating / M : 2.0 rating-2rating-282

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IRF3205 Datasheet

Features and benefits


* VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V
* Ultra Low On-Resistance
* High UIS and UIS 100% Test Application
* Hard Switched and High Frequency.

Application

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features
* VDS=55V; ID=105A@ VGS=.

Image gallery

IRF3205 Page 1 IRF3205 Page 2 IRF3205 Page 3

TAGS
IRF3205
N-Channel
Trench
Process
Power
MOSFET
Transistor
IRF320
IRF3205A
IRF3205H
Thinki Semiconductor
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